Edge-grinding machine for liquid crystal panel

ABSTRACT

The present disclosure provides an edge-grinding machine used for grinding a liquid crystal panel. The edge-grinding machine includes a chamfering grinding wheel assembly corresponding to a cutting edge of the liquid crystal panel for chamfering the cutting edge and further removing a sharp portion of the cutting edge; and a reshaping grinding wheel assembly corresponding to a complete cutting surface of the liquid crystal panel for reshaping the complete cutting surface and further removing a step and unwanted objects on the complete cutting surface. The edge-grinding machine of the present disclosure is capable of chamfering the corresponding cutting edge of the liquid crystal panel while reshaping the complete cutting surface for removing the step and unwanted objects thereon, which saves resources and labors required to reshape the liquid crystal panel and thus improves the yield rate of the liquid crystal panel.

BACKGROUND

1. Technical Field

The present disclosure relates to liquid crystal displaying technologies and, particularly, to an edge-grinding machine used for grinding and processing a liquid crystal panel.

2. Description of Related Art

Referring to FIG. 1, in the manufacturing process of a liquid crystal panel, two opposite substrates of large size, including a TFT substrate G1 and a CF substrate G2, are generally bonded together to form a mother panel M with liquid crystal sealed therein. The mother panel M then is cut to form the display panel unit U as shown in FIG. 2. The display panel unit U is further processed to form a final liquid crystal panel. The TFT substrate G1 often includes a glass substrate, thin film transistors formed on the glass substrate for driving liquid crystal, and at least one terminal region formed on the glass substrate for being connected to an external circuit. The CF substrate G2 often includes a glass substrate and a color filter formed on the glass substrate.

As shown in FIG. 1, conventionally, a cutting device with at least one cutter wheel is used for cutting the mother panel M to form the display panel unit U. When cutting the mother panel M, two cutter wheels respectively abut corresponding positions on surfaces of the TFT substrate G1 and the CF substrate G2. The two cutter wheels then move on the surfaces of the TFT substrate G1 and the CF substrate to respectively define two cutting lines on the TFT substrate G1 and the CF substrate G2. After that, the two cutter wheels cut the display panel unit U off the mother panel M along the cutting lines by applying force or heating vapor onto the cutting lines. The display panel unit U then is transferred to following processes by using robots.

Specifically, a pair of cutter wheel C1, C2 is used for cutting the mother panel M from up and down. One of the cutter wheel C1 abuts one side of TFT substrate G1 which is away from the CF substrate G2 and the other cutter wheel C2 abuts one side of the CF substrate G2 which is away from the TFT substrate G1. Ideally, the cutter wheel C2 is aligned with the cutter wheel C 1. Then, the two cutter wheels are controlled to operate at the same time, for example, controlled to rotate in opposite directions, to form a complete cutting surface P, which is capable of separating two adjacent display panel units U. As shown in FIG. 2, the complete cutting surface P includes a first cutting surface P1 formed on the TFT substrate G1 and a second cutting surface P2 formed on the CF substrate G2. In the ideal situation, the first cutting surface P1 is coplanar with the second cutting surface P2. After that, as shown in FIGS. 3 and 4, in the next process, the cutter wheel C2 is often used for further cutting the CF substrate G2 to reveal the terminal region of the TFT substrate G1. To a TFT substrate G1 configured with only one terminal region, the cutter wheel C2 cuts only one edge of the CF substrate G2 to reveal the corresponding terminal region. That is, to a display panel unit configured with one terminal region, the number of the complete cutting surfaces P is three.

After the terminal region is revealed, an edge-grinding machine is used for chamfering the cutting edge of the display panel unit U, thereby removing the sharp portion on each cutting edge. However, the present edge-grinding machine can only chamfer the cutting edge. On the other hand, as shown in FIG. 5, limited to the cutting precision of the present cutting machine, the cutter wheel corresponding to the TFT substrate G1 is often not aligned with the cutter wheel corresponding to the CF substrate G2, resulting in a step formed on the complete cutting surface of the display panel unit U. At this time, the first cutting surface P1 is not coplanar with the second cutting surface P2. Therefore, extra operators are needed to grind the display panel unit U in the following process to remove the step, which reduces the productivity of the liquid crystal panel.

Additionally, in the process of cutting the mother panel M to form the display panel unit U, due to some unexpected situations, for example, the cutter wheel C1 or the cutter wheel C2 shakes due to the power fluctuations or the platform supporting the mother panel M shakes due to some external factors, some unwanted objects B as shown in FIG. 7 may be left over on the complete cutting surface. This not only declines the cutting quality, but also reduces the manufacturing efficiency of the liquid crystal panel since it requires time and labor to grind the display panel to remove the unwanted objects B.

SUMMARY

One object of the present disclosure is to provide an edge-grinding machine for reshaping a complete cutting surface of a liquid crystal panel while chamfering a corresponding edge of the liquid crystal panel.

The present disclosure provides an edge-grinding machine used for grinding a liquid crystal panel. The edge-grinding machine includes a chamfering grinding wheel assembly corresponding to a cutting edge of the liquid crystal panel for chamfering the cutting edge and further removing a sharp portion of the cutting edge; and a reshaping grinding wheel assembly corresponding to a complete cutting surface of the liquid crystal panel for reshaping the complete cutting surface and further removing a step and unwanted objects on the complete cutting surface.

Preferably, the cutting edge includes a first cutting edge formed on a TFT substrate of the liquid crystal panel and a second cutting edge formed on a CF substrate of the liquid crystal panel; the chamfering grinding wheel assembly includes a first grinding wheel group having a first grinding wheel and a second grinding wheel respectively corresponding to the first cutting edge and the second cutting edge.

Preferably, the first grinding wheel is spaced away from the second grinding wheel along a moving direction of the liquid crystal panel.

Preferably, the chamfering grinding wheel assembly further includes at least one second grinding wheel group used for re-grinding the cutting edge chamfered by the first grinding wheel group; each second grinding wheel group includes a third grinding wheel and a fourth grinding wheel, the third grinding wheel corresponds to the first cutting edge and is spaced away from the first grinding wheel, and the fourth grinding wheel corresponds to the second cutting edge and is spaced away from the second grinding wheel.

Preferably, a rotating direction of the first grinding wheel is the same as that of the second grinding wheel, and the rotating direction of the second grinding wheel is the same as that of the fourth grinding wheel but opposite to that of the first grinding wheel/the third grinding wheel.

Preferably, the complete cutting surface includes a first cutting surface formed on the TFT substrate and a second cutting surface formed on the CF substrate, the reshaping grinding wheel assembly includes a first reshaping grinding wheel corresponding to the first cutting surface and the second cutting surface for removing the step formed between the first cutting surface and the second cutting surface and further keeping the first cutting surface coplanar with the second cutting surface.

Preferably, the reshaping grinding wheel assembly further includes at least one second reshaping grinding wheel for re-grinding the first cutting surface and the second cutting surface reshaped by the first reshaping grinding wheel, and each second grinding wheel is parallel to and spaced away from the first reshaping grinding wheel.

Preferably, a layer of grinding material is disposed on an outer surface of the first reshaping grinding wheel or the at least one second reshaping grinding wheel.

Preferably, a diameter of the at least one second reshaping grinding wheel is larger than that of the first reshaping grinding wheel.

Preferably, the edge-grinding machine further includes a controlling assembly, the controlling assembly is connected to the chamfering grinding wheel assembly and the reshaping grinding wheel assembly for controlling the chamfering grinding wheel assembly and the reshaping grinding wheel assembly to move to correspond to the cutting edge and the complete cutting surface needed to be reshaped.

The present disclosure further provides another edge-grinding machine for processing a liquid crystal panel having at least one cutting edge and at least one complete cutting surface. The edge-grinding machine includes a first chamfering grinding wheel group corresponding to the cutting edge for chamfering the cutting edge; and a first reshaping grinding wheel corresponding to the complete cutting surface for reshaping the complete cutting surface and further for removing a step and unwanted objects on the complete cutting surface.

Preferably, the cutting edge includes a first cutting edge formed on a TFT substrate of the liquid crystal panel and a second cutting edge formed on a CF substrate of the liquid crystal panel, the first grinding wheel group includes a first grinding wheel and a second grinding wheel respectively corresponding to the first cutting edge and the second cutting edge for chamfering the first cutting edge and the second cutting edge.

Preferably, the first grinding wheel is spaced away from the second grinding wheel along a moving direction of the liquid crystal panel.

Preferably, the rotating direction of the first grinding wheel is opposite to that of the second grinding wheel.

Preferably, the edge-grinding machine further includes at least one second grinding wheel group parallel to the first grinding wheel group, each second grinding wheel group is spaced away from the first grinding wheel group along the moving direction of the liquid crystal panel for re-grinding the corresponding cutting edge chamfered by the first grinding wheel group.

Preferably, the complete cutting surface includes a first cutting surface formed on a TFT substrate of the liquid crystal panel and a second cutting surface formed on a CF substrate of the liquid crystal panel, and the first reshaping grinding wheel reshapes the first cutting surface and the second cutting surface to keep the first cutting surface coplanar with the second cutting surface.

Preferably, a layer of grinding material is covered on an outer surface of the first reshaping grinding wheel.

Preferably, the edge-grinding further includes at least one second reshaping grinding wheel parallel to the first grinding wheel, the second reshaping grinding wheel is spaced away from the first grinding wheel for re-grinding the first cutting surface and the second cutting surface reshaped by the first grinding wheel.

Preferably, a diameter of the second grinding wheel is greater than that of the first grinding wheel.

Preferably, the edge-grinding machine further includes a controlling assembly connected to the first grinding wheel group and the first reshaping grinding wheel for controlling the first grinding wheel group and the first reshaping grinding wheel to move to the corresponding cutting edge and the complete cutting surface needed to be reshaped.

With the reshaping grinding wheel assembly arranged adjacent to the chamfering grinding wheel assembly, the reshaping grinding wheel assembly is capable of reshaping the complete cutting surface when the chamfering grinding wheel assembly chamfers the corresponding cutting edge. In this way, the step formed between the first cutting surface and the second cutting surface and the unwanted objects on the first cutting surface and the second cutting surface can be removed, allowing the edge-grinding machine to chamfer and reshape the liquid crystal panel. Therefore, the edge-grinding machine of the present disclosure can be used for chamfering and reshaping the liquid crystal panel at the same time, which saves the resources and labors required to reshape the liquid crystal panel and thus improves the yield rate of the liquid crystal panel.

DESCRIPTION OF THE DRAWINGS

Many aspects of the embodiments can be better understood with reference to the following drawings. The components in the drawings are not necessarily dawns to scale, the emphasis instead being placed upon clearly illustrating the principles of the embodiments. Moreover, in the drawings, like reference numerals designate corresponding parts throughout the several views.

FIG. 1 is a schematic view illustrating using two cutter wheels to cut a CF substrate and a TFT substrate to form a display panel unit;

FIG. 2 is a schematic view showing the display panel unit formed in FIG. 1;

FIGS. 3 and 4 are schematic views illustrating cutting the CF substrate to reveal a terminal region of the TFT substrate;

FIG. 5 is a schematic view showing that the present two cutter wheels respectively corresponding to the CF substrate and TFT substrate are not aligned with each other;

FIG. 6 is a schematic view showing the display panel unit formed in FIG. 5;

FIG. 7 is a schematic view showing an unwanted object on a complete cutting surface of the display panel unit;

FIG. 8 is a schematic view of a chamfering grinding wheel assembly and a reshaping grinding wheel assembly;

FIG. 9 is similar to FIG. 8 but viewed from another angle;

FIG. 10 is a schematic view showing using the chamfering grinding wheel assembly and the reshaping grinding wheel assembly of FIG. 8 to process the liquid crystal panel.

DETAILED DESCRIPTION

The disclosure is illustrated by way of example and not by way of limitation in the figures of the accompanying drawings in which like references indicate similar elements. It should be noted that references to “an” or “one” embodiment is this disclosure are not necessarily to the same embodiment, and such references mean at least one.

Referring to FIGS. 8 and 9, in which FIG. 8 is a schematic view of a chamfering grinding wheel assembly and a reshaping grinding wheel assembly, and FIG. 9 is similar to FIG. 8 but viewed from another angle. A liquid crystal panel 200 includes a TFT substrate 210 and a CF substrate 220 opposite to the TFT substrate 210. The TFT substrate 210 includes a glass substrate, thin film transistors formed on the glass substrate for driving liquid crystal, and a terminal region formed on the glass substrate for being connected to an external circuit. The CF substrate 220 includes a glass substrate and a color filter formed on the glass substrate. The liquid crystal panel 200 further includes four cutting edges 230 and at least one complete cutting surface 240. Each cutting edge 230 includes a first cutting edge 231 formed on the TFT substrate 210 and a second cutting edge 232 formed on the CF substrate 220. The complete cutting surface 240 includes a first cutting surface 241 formed on the TFT substrate 210 and a second cutting surface 242 formed on the CF substrate 220.

Referring also to FIG. 9, an edge-grinding machine 100 is used for grinding and processing the liquid crystal panel 200, including chamfering the corresponding cutting edge 230 to remove sharp portions of the corresponding cutting edge 230 and reshaping the complete cutting surface 240 to remove a step and unwanted objects on the corresponding complete cutting surface.

The edge-grinding machine 100 includes a chamfering grinding wheel assembly 110, a reshaping grinding wheel assembly 120, and a controlling assembly (not shown in the drawings). The chamfering grinding wheel assembly 110 corresponds to the cutting edge 230 of the liquid crystal panel 200 for chamfering the corresponding cutting edge 230 and further removing the sharp portion of the corresponding cutting edge 230. The reshaping grinding wheel assembly 120 corresponds to the complete cutting surface 240 for reshaping the complete cutting surface 240 and further removing the step formed between the first cutting surface 241 and the second cutting surface 242. The reshaping grinding wheel assembly 120 can also remove unwanted objects such as protrusions on the complete cutting surface 240. The controlling assembly is connected to the chamfering grinding wheel assembly 110 and the reshaping grinding wheel assembly 120 for controlling the moving direction and the moving distance of the chamfering grinding wheel assembly 110 and the reshaping grinding wheel assembly 120.

Specifically, in the embodiment, the chamfering grinding wheel assembly 110 includes a first grinding wheel group 111. The first grinding wheel group 111 includes a first grinding wheel 111 a and a second grinding wheel 111 b. The first grinding wheel 111 a corresponds to the first cutting edge 231 of each cutting edge 230 for chamfering the first cutting edge 231, thereby removing the sharp portion of the first cutting edge 231. The second grinding wheel 111 b corresponds to the second cutting edge 232 for chamfering the second cutting edge 232, thereby removing the sharp portion of the second cutting edge 231. The second grinding wheel 111 b is spaced away from the first grinding wheel 111 a along the moving direction of the liquid crystal panel 200.

Furthermore, in the embodiment, the chamfering grinding wheel assembly 110 includes a second grinding wheel group 112 which is spaced away from the first grinding wheel group 111 for re-grinding the chamfered first cutting edge 231 and the second cutting edge 232. The second chamfering grinding wheel group 112 includes a third grinding wheel 112 a parallel to the first grinding wheel 111 a and a fourth grinding wheel 112 b parallel to the second grinding wheel 111 b. The third grinding wheel 112 a is spaced away from the first grinding wheel 111 a. Similar to the first grinding wheel 111 a, the third grinding wheel 112 a corresponds to the first cutting edge 231, being used for re-grinding the first cutting edge 231 chamfered by the first grinding wheel 111 a. The fourth grinding wheel 112 b is spaced away from the second grinding wheel 111 b. Similar to the second grinding wheel 111 b, the fourth grinding wheel 112 b corresponds to the second cutting edge 232, being used for re-grinding the second cutting edge 232 chamfered by the second grinding wheel 112 b.

It is understood that the chamfering grinding wheel assembly 110 is not limited to the embodiment. In some embodiments that the chamfering quality of the liquid crystal panel 200 is not strictly required, the second grinding wheel group 112 can be omitted. Similarly, in other embodiments, when the chamfering quality of the liquid crystal panel 200 is strictly required, the chamfering grinding wheel assembly 110 can include more than one second grinding wheel group 112, which is capable of re-grinding the chamfered first cutting edge 231 and the chamfered second cutting edge 232 over and over.

The reshaping grinding wheel assembly 120 includes a first reshaping grinding wheel 121 and a second reshaping grinding wheel 122 parallel to the first reshaping grinding wheel 121. The first reshaping grinding wheel 121 is parallel to and spaced away from the chamfering grinding wheel assembly 110. A first layer 121 a of grinding material is covered on an outer surface of the first reshaping grinding wheel 121. The first layer 121 a of grinding material corresponds to the corresponding complete cutting surface of the liquid crystal panel, that is, corresponds to the complete cutting surface 240 needed to be reshaped, for removing the step formed between the first cutting surface 241 and the second cutting surface 242, thereby keeping the first cutting surface 241 coplanar with the second cutting surface 242. Meanwhile, the first reshaping grinding wheel 121 can also remove the unwanted objects such as protrusions on the first cutting surface 241 and the second cutting surface 242. The second reshaping grinding wheel 122 is spaced away from the first reshaping grinding wheel 121, being used for re-grinding the first and second cutting surface 241, 242 reshaped by the first reshaping grinding wheel 121 for improving the quality of the reshaping operation. In the embodiment, a diameter of the second reshaping grinding wheel 122 is greater than that of the first reshaping grinding wheel 121. A second layer 122 a of grinding material is covered on an outer surface of the second reshaping grinding wheel 122.

It is understood that the reshaping grinding wheel assembly 120 is not limited to the embodiment. In other embodiments, the number of the reshaping grinding wheel can be adjusted according to the cutting situation of the first cutting surface 241 and the second cutting surface 242. For example, if the step formed between the first and second cutting surfaces 241, 242 is distinct, or there are a number of unwanted objects on the first and second cutting surfaces 241, 242, the reshaping grinding wheel assembly 120 can include more than one second reshaping grinding wheel 122. On the other hand, if the step formed between the first and second cutting surfaces 241, 242 are unobvious, or there are few unwanted objects on the first cutting surface 241 or the second cutting surface 242, the reshaping grinding wheel assembly 120 can be configured with the omission of the second reshaping grinding wheel 122.

It is noted that, to different types of liquid crystal panel 200, the number of the cutting edge 230 needed to be chamfered remains unchanged, but the number of the complete cutting surface 240 needed to be reshaped is correspondingly changed as the type of the liquid crystal panel changes. Specifically, the sum of the number of the complete cutting surface 240 needed to be reshaped and the number of the revealed terminal region is equal to that of the cutting edge 240 needed to be chamfered. For example, as shown in FIG. 10, to a liquid crystal panel configured with only one terminal region revealed on an edge of the TFT substrate, the number of the complete cutting surfaces 240 needed to be reshaped is three and the number of non-complete cutting surface is one. In this state, on the non-complete cutting surface, the first cutting surface 241 is spaced away from the second cutting surface 242 and there are no steps formed between the first cutting surface 241 and the second cutting surface 242, therefore, the edge-grinding machine 100 is mainly used for chamfering the cutting edge 230 of the liquid crystal panel 200. In some embodiments, if the TFT substrate 210 is configured with two terminal regions on two edges thereof, since the number of the terminal region is two, therefore, the number of the complete cutting surfaces 240 to be reshaped is also two, while the number of the cutting edges 230 to be chamfered by the edge-grinding machine 100 is four. It is noted that in the embodiment, as shown in FIG. 10, even corresponding to the non-complete cutting surface, the edge-grinding machine 100 still can be used for removing the unwanted objects on the TFT substrate 210 when chamfering the corresponding cutting edge 230.

The controlling assembly is connected to the chamfering grinding wheel assembly 110 and the reshaping grinding wheel assembly 120 for adjusting the positions of the chamfering grinding wheel assembly 110 and the reshaping grinding wheel assembly 120. Thus, the chamfering grinding wheel assembly 110 and the reshaping grinding wheel assembly 120 can move to correspond to the cutting edge 230 or the complete cutting surface 240 needed to be reshaped.

Before using the edge-grinding machine 100 to chamfer the cutting edge of the liquid crystal panel 200, the liquid crystal panel 200 is placed on a transferring apparatus, with the first cutting edge 231 to be chamfered corresponding to the first grinding wheel 111 a and the third grinding wheel 112 a, with the second cutting edge 232 to be chamfered corresponding to the second grinding wheel 111 b and the fourth grinding wheel 112 b, and with the first cutting surface 241 and the second cutting surface 242 respectively corresponding to the first reshaping grinding wheel 121 and the second reshaping grinding wheel 122. During the process, the positions of each grinding wheel and each reshaping grinding wheel can be slightly adjusted via the controlling assembly, thus, the chamfering grinding wheel assembly 110 and the reshaping grinding wheel assembly 120 can precisely process the liquid crystal panel 200. After that, the transferring apparatus operates to move the liquid crystal panel 200 along the direction Y shown in FIG. 9.

The chamfering grinding wheel assembly 110 at the same time operates to chamfer the first cutting edge 231 and the second cutting edge 232 to remove the sharp portions thereof. During the process, the outer surfaces of the first grinding wheel 111 a and the second grinding wheel 111 b respectively contact the first cutting edge 231 and the second cutting edge 232, which allows friction generated therebetween. Under the friction, the liquid crystal panel 200 is driven to move along the direction X as shown in FIG. 9 towards the chamfering grinding wheel assembly 110 for a predetermined distance, which allows the portion of the corresponding cutting edge of the liquid crystal panel processed by the edge-grinding machine 100 to have a predetermined width in the direction X. Since the two grinding wheels are spaced away from each other along the direction Y, therefore, the thickness of the corresponding cutting edge can be prevented grinded to zero by the first grinding wheel 111 a and the second grinding wheel 111 b, which allows the liquid crystal panel 200 to move along the direction X. After the portion chamfered by the first grinding wheel group 111 is moved to correspond to the second grinding wheel group 112, the second grinding wheel group 112 operates to re-grind the chamfered first and second cutting edges 231, 232.

Meanwhile, the reshaping grinding wheel assembly 120 also begins to operate to reshape the first cutting surface 241 and the second cutting surface 242 of the corresponding cutting surface 240. Since the first layer 121 a of grinding material abuts the first cutting surface 241 and the second cutting surface 242, thus, after the first reshaping grinding wheel 121 rotates, the first layer 121 a of grinding material is capable of removing the step formed between the first cutting surface 241 and the second cutting surface 242 and removing the unwanted objects, such as protrusions on the first cutting surface 241 and the second cutting surface 242. As the liquid crystal panel 200 moves on along the direction Y, the portions of the first cutting surface 241 and the second cutting surface 242 reshaped by the first reshaping grinding wheel 121 is moved to correspond to the second reshaping grinding wheel 122. Since the diameter of the second reshaping grinding wheel 122 is greater than that of the first reshaping grinding wheel 121, therefore, the extending distance beyond the liquid crystal panel 200 from the second reshaping grinding wheel 122 is longer than that beyond the liquid crystal panel 200 from the first reshaping grinding wheel 121 along the direction X, allowing the second reshaping grinding wheel 122 to re-grind the reshaped first and second cutting surfaces 241, 242.

With the reshaping grinding wheel assembly 120 arranged adjacent to the chamfering grinding wheel assembly 110, the reshaping grinding wheel assembly 120 is capable of reshaping the complete cutting surface 240 when the chamfering grinding wheel assembly 110 chamfers the corresponding cutting edge 230. In this way, the step formed between the first cutting surface 241 and the second cutting surface 242 and the unwanted objects on the first cutting surface 241 and the second cutting surface 242 can be removed, allowing the edge-grinding machine 100 to chamfer and reshape the liquid crystal panel 200. Additionally, even corresponding to the non-complete cutting surface, the edge-grinding machine 100 can also remove the unwanted objects on the first cutting surface of the TFT substrate 210. Therefore, the edge-grinding machine 100 of the present disclosure can be used for chamfering and reshaping the liquid crystal panel at the same time, which saves the resources and labors required to reshape the liquid crystal panel and thus improves the yield rate of the liquid crystal panel 200.

Even though information and the advantages of the present embodiments have been set forth in the foregoing description, together with details of the mechanisms and functions of the present embodiments, the disclosure is illustrative only; and that changes may be made in detail, especially in matters of shape, size, and arrangement of parts within the principles of the present embodiments to the full extend indicated by the broad general meaning of the terms in which the appended claims are expressed. 

What is claimed is:
 1. An edge-grinding machine used for grinding a liquid crystal panel, comprising: a chamfering grinding wheel assembly corresponding to a cutting edge of the liquid crystal panel for chamfering the cutting edge and further removing a sharp portion of the cutting edge; and a reshaping grinding wheel assembly corresponding to a complete cutting surface of the liquid crystal panel for reshaping the complete cutting surface and further removing a step and unwanted objects on the complete cutting surface.
 2. The edge-grinding machine as claimed in claim 1, wherein the cutting edge comprises a first cutting edge formed on a TFT substrate of the liquid crystal panel and a second cutting edge formed on a CF substrate of the liquid crystal panel; the chamfering grinding wheel assembly comprises a first grinding wheel group having a first grinding wheel and a second grinding wheel respectively corresponding to the first cutting edge and the second cutting edge.
 3. The edge-grinding machine as claimed in claim 2, wherein the first grinding wheel is spaced away from the second grinding wheel along a moving direction of the liquid crystal panel.
 4. The edge-grinding machine as claimed in claim 3, wherein the chamfering grinding wheel assembly further comprises at least one second grinding wheel group used for re-grinding the cutting edge chamfered by the first grinding wheel group; each second grinding wheel group comprises a third grinding wheel and a fourth grinding wheel, the third grinding wheel corresponds to the first cutting edge and is spaced away from the first grinding wheel, and the fourth grinding wheel corresponds to the second cutting edge and is spaced away from the second grinding wheel.
 5. The edge-grinding machine as claimed in claim 4, wherein a rotating direction of the first grinding wheel is the same as that of the second grinding wheel, and the rotating direction of the second grinding wheel is the same as that of the fourth grinding wheel but opposite to that of the first grinding wheel/the third grinding wheel.
 6. The edge-grinding machine as claimed in claim 1, wherein the complete cutting surface comprises a first cutting surface formed on the TFT substrate and a second cutting surface formed on the CF substrate, the reshaping grinding wheel assembly comprises a first reshaping grinding wheel corresponding to the first cutting surface and the second cutting surface for removing the step formed between the first cutting surface and the second cutting surface and further keeping the first cutting surface coplanar with the second cutting surface.
 7. The edge-grinding machine as claimed in claim 6, wherein the reshaping grinding wheel assembly further comprises at least one second reshaping grinding wheel for re-grinding the first cutting surface and the second cutting surface reshaped by the first reshaping grinding wheel, and each second grinding wheel is parallel to and spaced away from the first reshaping grinding wheel.
 8. The edge-grinding machine as claimed in claim 7, wherein a layer of grinding material is disposed on an outer surface of the first reshaping grinding wheel or the at least one second reshaping grinding wheel.
 9. The edge-grinding machine as claimed in claim 7, wherein a diameter of the at least one second reshaping grinding wheel is larger than that of the first reshaping grinding wheel.
 10. The edge-grinding machine as claimed in claim 6 further comprising a controlling assembly, the controlling assembly is connected to the chamfering grinding wheel assembly and the reshaping grinding wheel assembly for controlling the chamfering grinding wheel assembly and the reshaping grinding wheel assembly to move to correspond to the cutting edge and the complete cutting surface needed to be reshaped.
 11. An edge-grinding machine for processing a liquid crystal panel having at least one cutting edge and at least one complete cutting surface, comprising: a first chamfering grinding wheel group corresponding to the cutting edge for chamfering the cutting edge; and a first reshaping grinding wheel corresponding to the complete cutting surface for reshaping the complete cutting surface and further for removing a step and unwanted objects on the complete cutting surface.
 12. The edge-grinding machine as claimed in claim 11, wherein the cutting edge comprises a first cutting edge formed on a TFT substrate of the liquid crystal panel and a second cutting edge formed on a CF substrate of the liquid crystal panel, the first grinding wheel group comprises a first grinding wheel and a second grinding wheel respectively corresponding to the first cutting edge and the second cutting edge for chamfering the first cutting edge and the second cutting edge.
 13. The edge-grinding machine as claimed in claim 12, wherein the first grinding wheel is spaced away from the second grinding wheel along a moving direction of the liquid crystal panel.
 14. The edge-grinding machine as claimed in claim 13, wherein the rotating direction of the first grinding wheel is opposite to that of the second grinding wheel.
 15. The edge-grinding machine as claimed in claim 12 further comprising at least one second grinding wheel group parallel to the first grinding wheel group, each second grinding wheel group is spaced away from the first grinding wheel group along the moving direction of the liquid crystal panel for re-grinding the corresponding cutting edge chamfered by the first grinding wheel group.
 16. The edge-grinding machine as claimed in claim 11, wherein the complete cutting surface comprises a first cutting surface formed on a TFT substrate of the liquid crystal panel and a second cutting surface formed on a CF substrate of the liquid crystal panel, and the first reshaping grinding wheel reshapes the first cutting surface and the second cutting surface to keep the first cutting surface coplanar with the second cutting surface.
 17. The edge-grinding machine as claimed in claim 16, wherein a layer of grinding material is covered on an outer surface of the first reshaping grinding wheel.
 18. The edge-grinding as claimed in claim 16 further comprising at least one second reshaping grinding wheel parallel to the first grinding wheel, the second reshaping grinding wheel is spaced away from the first grinding wheel for re-grinding the first cutting surface and the second cutting surface reshaped by the first grinding wheel.
 19. The edge-grinding machine as claimed in claim 18, wherein a diameter of the second grinding wheel is greater than that of the first grinding wheel.
 20. The edge-grinding machine as claimed in claim 16 further comprising a controlling assembly connected to the first grinding wheel group and the first reshaping grinding wheel for controlling the first grinding wheel group and the first reshaping grinding wheel to move to the corresponding cutting edge and the complete cutting surface needed to be reshaped. 